Monzurul Alam received the Ph.D. degree in Electrical and Computer Engineering from Purdue University in 2021, the M.E. degree in Electrical Engineering from Tennessee State University in 2014, and the B.Sc. degree in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology in 2006. He illustrated the practical limit and the design guideline of a superjunction device in 4H-SiC through an analytical model backed by TCAD simulation. He also demonstrated the functionality of a novel n-channel IGBT device called waffle-substrate based IGBT in 4H-SiC through design, fabrication, and characterization at Birck Nanotechnology Center of Purdue University.