A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS

Marvin Aidoo; Goker Ariyak; Fazle Rabbi; Monique D. Kirkman-Bey; Numan S. Dogan; Zhijian Xie

doi:10.1109/SECON.2017.7925275

A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS

Marvin Aidoo, Goker Ariyak, Fazle Rabbi, Monique D. Kirkman-Bey, Numan S. Dogan, Zhijian Xie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm². Power consumption and output power are 13.33 mW and -6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption.

Original language	English
Title of host publication	IEEE SoutheastCon 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538615393
DOIs	https://doi.org/10.1109/SECON.2017.7925275
State	Published - May 10 2017
Externally published	Yes
Event	IEEE SoutheastCon 2017 - Charlotte, United States Duration: Mar 30 2017 → Apr 2 2017

Publication series

Name	Conference Proceedings - IEEE SOUTHEASTCON
Volume	0
ISSN (Print)	1091-0050
ISSN (Electronic)	1558-058X

Conference

Conference	IEEE SoutheastCon 2017
Country/Territory	United States
City	Charlotte
Period	03/30/17 → 04/2/17

Keywords

Cross coupled NMOS-PMOS pair
Cross-coupled inverter pairs
Millimetre-wave
RTWO

Access to Document

10.1109/SECON.2017.7925275

Cite this

@inproceedings{193e2437b0114cef80cc5fe5c4cc3583,

title = "A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS",

abstract = "In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm2. Power consumption and output power are 13.33 mW and -6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption.",

keywords = "Cross coupled NMOS-PMOS pair, Cross-coupled inverter pairs, Millimetre-wave, RTWO",

author = "Marvin Aidoo and Goker Ariyak and Fazle Rabbi and Kirkman-Bey, \{Monique D.\} and Dogan, \{Numan S.\} and Zhijian Xie",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; IEEE SoutheastCon 2017 ; Conference date: 30-03-2017 Through 02-04-2017",

year = "2017",

month = may,

day = "10",

doi = "10.1109/SECON.2017.7925275",

language = "English",

series = "Conference Proceedings - IEEE SOUTHEASTCON",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE SoutheastCon 2017",

}

Aidoo, M, Ariyak, G, Rabbi, F, Kirkman-Bey, MD, Dogan, NS & Xie, Z 2017, A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS. in IEEE SoutheastCon 2017., 7925275, Conference Proceedings - IEEE SOUTHEASTCON, vol. 0, Institute of Electrical and Electronics Engineers Inc., IEEE SoutheastCon 2017, Charlotte, United States, 03/30/17. https://doi.org/10.1109/SECON.2017.7925275

TY - GEN

T1 - A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS

AU - Aidoo, Marvin

AU - Ariyak, Goker

AU - Rabbi, Fazle

AU - Kirkman-Bey, Monique D.

AU - Dogan, Numan S.

AU - Xie, Zhijian

PY - 2017/5/10

Y1 - 2017/5/10

N2 - In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm2. Power consumption and output power are 13.33 mW and -6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption.

AB - In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm2. Power consumption and output power are 13.33 mW and -6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption.

KW - Cross coupled NMOS-PMOS pair

KW - Cross-coupled inverter pairs

KW - Millimetre-wave

KW - RTWO

UR - https://www.scopus.com/pages/publications/85019680757

U2 - 10.1109/SECON.2017.7925275

DO - 10.1109/SECON.2017.7925275

M3 - Conference contribution

T3 - Conference Proceedings - IEEE SOUTHEASTCON

BT - IEEE SoutheastCon 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE SoutheastCon 2017

Y2 - 30 March 2017 through 2 April 2017

ER -

A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS

Abstract

Publication series

Conference

Keywords

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