A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Estiak Ahmad; Md Rezaul Karim; Shihab Bin Hafiz; C. Lewis Reynolds; Yang Liu; Shanthi Iyer

doi:10.1038/s41598-017-09280-4

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Estiak Ahmad, Md Rezaul Karim, Shihab Bin Hafiz, C. Lewis Reynolds, Yang Liu, Shanthi Iyer

Joint School of Nanoscience and Nanoengineering

Research output: Contribution to journal › Article › peer-review

Abstract

Self-catalyzed growth of axial GaAs_1-xSb_x nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 μm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (T_sub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher T_sub = 620 °C and then continuing the growth at lower T_sub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 μm at room temperature.

Original language	English
Article number	10111
Journal	Scientific Reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-09280-4
State	Published - Dec 1 2017

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title = "A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range",

abstract = "Self-catalyzed growth of axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 μm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.\% and photoluminescence emission reaching 1.3 μm at room temperature.",

author = "Estiak Ahmad and Karim, \{Md Rezaul\} and Hafiz, \{Shihab Bin\} and Reynolds, \{C. Lewis\} and Yang Liu and Shanthi Iyer",

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T1 - A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

AU - Ahmad, Estiak

AU - Karim, Md Rezaul

AU - Hafiz, Shihab Bin

AU - Reynolds, C. Lewis

AU - Liu, Yang

AU - Iyer, Shanthi

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Self-catalyzed growth of axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 μm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 μm at room temperature.

AB - Self-catalyzed growth of axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 μm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 μm at room temperature.

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U2 - 10.1038/s41598-017-09280-4

DO - 10.1038/s41598-017-09280-4

M3 - Article

SN - 2045-2322

VL - 7

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 10111

ER -

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

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