An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Ashraf A. Osman; Mohamed A. Osman; Numan S. Dogan; Mohamed A. Imam

doi:10.1109/4.341743

An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Ashraf A. Osman, Mohamed A. Osman, Numan S. Dogan, Mohamed A. Imam

Research output: Contribution to journal › Article › peer-review

Abstract

The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C).

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/4.341743
State	Published - Feb 1995
Externally published	Yes

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title = "An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation",

abstract = "The Tanh law MOSFET model proposed earlier by Shousha \& Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C).",

author = "Osman, \{Ashraf A.\} and Osman, \{Mohamed A.\} and Dogan, \{Numan S.\} and Imam, \{Mohamed A.\}",

year = "1995",

month = feb,

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pages = "147--150",

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AU - Osman, Ashraf A.

AU - Osman, Mohamed A.

AU - Dogan, Numan S.

AU - Imam, Mohamed A.

PY - 1995/2

Y1 - 1995/2

N2 - The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C).

AB - The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C).

UR - https://www.scopus.com/pages/publications/0029247785

U2 - 10.1109/4.341743

DO - 10.1109/4.341743

M3 - Article

SN - 0018-9200

VL - 30

SP - 147

EP - 150

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 2

ER -

An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Abstract

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