An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Ashraf A. Osman; Mohamed A. Osman; Numan S Dogan; Mohamed A. Imam

doi:10.1109/4.341743

An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Ashraf A. Osman
, Mohamed A. Osman
, Numan S Dogan
, Mohamed A. Imam

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C). © 1995 IEEE

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/4.341743
State	Published - Jan 1 1995

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10.1109/4.341743

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title = "An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation",

abstract = "The Tanh law MOSFET model proposed earlier by Shousha \& Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C). {\textcopyright} 1995 IEEE",

author = "Osman, \{Ashraf A.\} and Osman, \{Mohamed A.\} and Dogan, \{Numan S\} and Imam, \{Mohamed A.\}",

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N2 - The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C). © 1995 IEEE

AB - The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27–200° C). © 1995 IEEE

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An Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation

Abstract

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