Bandgap Tuning in GaAs1-x Sbx Axial Nanowires Grown by Ga-Assisted Molecular Beam Epitaxy

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	035002 (10 pp)
Journal	Semiconductor Science and Technology
Volume	32
State	Published - 2017

Cite this

@article{8bd60b6c2c724c57877b7f13dea8939d,

title = "Bandgap Tuning in GaAs1-x Sbx Axial Nanowires Grown by Ga-Assisted Molecular Beam Epitaxy",

author = "Estiak Ahmad and Ojha, \{Sai K\} and Kasanaboina, \{Pavan K\} and Lew Reynolds and Yang Liu and Iyer, \{Shanthi N\}",

year = "2017",

language = "English",

volume = "32",

pages = "035002 (10 pp)",

journal = "Semiconductor Science and Technology",

}

TY - JOUR

T1 - Bandgap Tuning in GaAs1-x Sbx Axial Nanowires Grown by Ga-Assisted Molecular Beam Epitaxy

AU - Ahmad, Estiak

AU - Ojha, Sai K

AU - Kasanaboina, Pavan K

AU - Reynolds, Lew

AU - Liu, Yang

AU - Iyer, Shanthi N

PY - 2017

Y1 - 2017

M3 - Article

VL - 32

SP - 035002 (10 pp)

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -