Characterization and modeling of ESD diodes in RF circuits

Abid Mehmood, Zhijian Xie, Nathaniel Peachey, Scott Parker

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the characterization of diode arrays fabricated in IBM's 0.18um CSOI7RF technology under both ESD and Radio Frequency (RF) test conditions. For the ESD characterization, HBM and TLP measurements and simulations are conducted and discussed in detail. For the RF characterization, the small signal and large signal responses are both measured and simulated. The primary focus is the diode array loading capacitance which is extracted from the small signal S-Parameters, and the harmonic power which is measured at both even and odd harmonics during a 900MHz power sweep. This research focuses on the connection between asymmetry in the diode structures (mismatch) and the even harmonic responses of bi-directional shunted ESD diode connected circuits.

Original languageEnglish
Title of host publicationConference Proceedings - IEEE SOUTHEASTCON
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479965854
DOIs
StatePublished - Nov 7 2014
Externally publishedYes
EventIEEE SoutheastCon 2014 - Lexington, United States
Duration: Mar 13 2014Mar 16 2014

Publication series

NameConference Proceedings - IEEE SOUTHEASTCON
ISSN (Print)1091-0050
ISSN (Electronic)1558-058X

Conference

ConferenceIEEE SoutheastCon 2014
Country/TerritoryUnited States
CityLexington
Period03/13/1403/16/14

Keywords

  • ESD
  • HBM
  • RFIC modeling and characterization
  • SOI
  • TLP

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