TY - JOUR
T1 - Characterization of 2D Hybrid Systems: Graphene and Beyond
AU - Pourianejad, Sajedeh
AU - Aryeetey, Frederick
AU - Aravamudhan, Shyam
AU - Ignatova, Tetyana
PY - 2019
Y1 - 2019
N2 - High-quality junction between semiconductor and metallic contact with no energy barrier is crucial for high-performance device, which is hard to achieve for 2D MoS2 because of its large bandgap. The heterostructure of single-layers MoS2/graphene has been demonstrated. However, a critical challenge has emerged: to develop reliable methods to transfer this graphene from its growth substrate to the application substrate without damaging the fragile patchwork or leaving undesired residues on the graphene surface. To ascertain the MoS2 and graphene layer number and their defects, Confocal Raman spectroscopy and photoluminescence measurements were conducted before and after transfer. To identify the thin film thickness atomic force microscopy (AFM) was performed. Scanning electron microscopy was used to investigate the surface morphologies of MoS2 and Graphene. To confirm the low surface defect results, X-ray Photoelectron Spectroscopy (XPS) was also carried out. We speculate that the tunable Fermi level in graphene allows excellent work-function to be well-matched with MoS2, resulting in low contact resistance.
AB - High-quality junction between semiconductor and metallic contact with no energy barrier is crucial for high-performance device, which is hard to achieve for 2D MoS2 because of its large bandgap. The heterostructure of single-layers MoS2/graphene has been demonstrated. However, a critical challenge has emerged: to develop reliable methods to transfer this graphene from its growth substrate to the application substrate without damaging the fragile patchwork or leaving undesired residues on the graphene surface. To ascertain the MoS2 and graphene layer number and their defects, Confocal Raman spectroscopy and photoluminescence measurements were conducted before and after transfer. To identify the thin film thickness atomic force microscopy (AFM) was performed. Scanning electron microscopy was used to investigate the surface morphologies of MoS2 and Graphene. To confirm the low surface defect results, X-ray Photoelectron Spectroscopy (XPS) was also carried out. We speculate that the tunable Fermi level in graphene allows excellent work-function to be well-matched with MoS2, resulting in low contact resistance.
M3 - Article
VL - T70.00240
JO - Bulletin of the American Physical Society
JF - Bulletin of the American Physical Society
ER -