Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD ’04. The 16th International Symposium on
Pages	233-235
State	Published - 2004

Cite this

@inproceedings{6f3ffe6d1901487b9af8b09927a3a381,

title = "Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration",

author = "A. Shibib and Xu Shuming and Xie Zhijian and P. Gammel and Marco Mastrapasqua and I. Kizilyalli and Zhijian Xie",

year = "2004",

language = "English",

pages = "233--235",

booktitle = "Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD {\textquoteright}04. The 16th International Symposium on",

}

TY - GEN

T1 - Control of hot carrier degradation in LDMOS devices by a dummy gate field plate: experimental demonstration

AU - Shibib, A.

AU - Shuming, Xu

AU - Zhijian, Xie

AU - Gammel, P.

AU - Mastrapasqua, Marco

AU - Kizilyalli, I.

AU - Xie, Zhijian

PY - 2004

Y1 - 2004

M3 - Conference contribution

SP - 233

EP - 235

BT - Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD ’04. The 16th International Symposium on

ER -