DC Modeling and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors for High-Temperature Applications

Cemal T. Dikmen; Numan S. Doǧan; Mohamed A. Osman

doi:10.1109/4.272113

DC Modeling and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors for High-Temperature Applications

Cemal T. Dikmen, Numan S. Doǧan, Mohamed A. Osman

School of Electrical Engineering and Computer Science, Washington State University

Research output: Contribution to journal › Article › peer-review

Abstract

The large signal de characteristics of AIGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27°-300°C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27°-300°C).

Original language	English
Pages (from-to)	108-116
Number of pages	9
Journal	IEEE Journal of Solid-State Circuits
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/4.272113
State	Published - Feb 1994
Externally published	Yes

Access to Document

10.1109/4.272113

Cite this

@article{738afdfc669e453fafe98055f033d167,

title = "DC Modeling and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors for High-Temperature Applications",

abstract = "The large signal de characteristics of AIGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27°-300°C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27°-300°C).",

author = "Dikmen, \{Cemal T.\} and Doǧan, \{Numan S.\} and Osman, \{Mohamed A.\}",

year = "1994",

month = feb,

doi = "10.1109/4.272113",

language = "English",

volume = "29",

pages = "108--116",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

number = "2",

}

TY - JOUR

T1 - DC Modeling and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors for High-Temperature Applications

AU - Dikmen, Cemal T.

AU - Doǧan, Numan S.

AU - Osman, Mohamed A.

PY - 1994/2

Y1 - 1994/2

N2 - The large signal de characteristics of AIGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27°-300°C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27°-300°C).

AB - The large signal de characteristics of AIGaAs/GaAs heterojunction bipolar transistors (HBT) at high temperatures (27°-300°C) are reported. A high-temperature SPICE model is developed which includes the recombination-generation current components and avalanche multiplication which become extremely important at high temperatures. The effect of avalanche breakdown is also included to model the current due to thermal generation of electron/hole pairs causing breakdown at high temperatures. A parameter extraction program is developed and used to extract the model parameters of HBT's at different temperatures. Fitting functions for the model parameters as a function of temperature are developed. These parameters are then used in the SPICE Ebers-Moll model for the dc characterization of the HBT at any temperature between (27°-300°C).

UR - https://www.scopus.com/pages/publications/0028369730

U2 - 10.1109/4.272113

DO - 10.1109/4.272113

M3 - Article

SN - 0018-9200

VL - 29

SP - 108

EP - 116

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 2

ER -

DC Modeling and Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors for High-Temperature Applications

Abstract

Access to Document

Other files and links

Fingerprint

Cite this