Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

R. Molaei; R. Bayati; S. Nori; Dhananjay Kumar; J. T. Prater; J. Narayan

doi:10.1063/1.4857155

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

R. Molaei
, R. Bayati
, S. Nori
, Dhananjay Kumar
, J. T. Prater
, J. Narayan

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO 2(010) NiO(111) c-YSZ(001) Si(001) and VO2[100] NiO110c-YSZ100Si100. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects. © 2013 AIP Publishing LLC.

Original language	English
Article number	252109
Journal	Applied Physics Letters
Volume	103
Issue number	25
DOIs	https://doi.org/10.1063/1.4857155
State	Published - Dec 16 2013

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title = "Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment",

abstract = "VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO 2(010) NiO(111) c-YSZ(001) Si(001) and VO2[100] NiO110c-YSZ100Si100. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects. {\textcopyright} 2013 AIP Publishing LLC.",

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T1 - Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

AU - Molaei, R.

AU - Bayati, R.

AU - Nori, S.

AU - Kumar, Dhananjay

AU - Prater, J. T.

AU - Narayan, J.

PY - 2013/12/16

Y1 - 2013/12/16

N2 - VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO 2(010) NiO(111) c-YSZ(001) Si(001) and VO2[100] NiO110c-YSZ100Si100. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects. © 2013 AIP Publishing LLC.

AB - VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO 2(010) NiO(111) c-YSZ(001) Si(001) and VO2[100] NiO110c-YSZ100Si100. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects. © 2013 AIP Publishing LLC.

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Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

Abstract

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