TY - JOUR
T1 - Electrical and Optical properties of Titanium Oxynitride Thin Films
AU - Reddy, Muchha R
AU - Som, Jacob
AU - Apte, Prakash R
AU - Balasurbramanian,, B.
AU - Shiled, Jeffrey E
AU - Anderson, Michael
AU - Kumar, Dhananjay
PY - 2020
Y1 - 2020
N2 - A TiNxOy (TiNO) material system has been synthesized in thin film form for thefirst time using a pulsed laser deposition process. X-ray diffraction and X-rayphotoelectron spectroscopy measurements have been carried out to show partialoxidation of TiN to TiNO. The current (I)-voltage (V) characteristics recordedfrom TiNO films sandwiched between indium tin oxide (ITO) and gold (Au)layers and/or copper (Cu) electrodes have shown that the I–V curves lie in thefirst and third quadrants (i.e., both I and V are either positive or negative) in thedark conditions, while the I–V curves lie in the second and fourth quadrants(i.e., I and V with opposite sign) in the illuminated conditions. The positive signof power (I 9 V = Positive) under dark conditions indicates dissipation ofpower in the TiNO system, while the negative sign of the power(I 9 V = Negative) under optical illumination indicates the power generationcapability of TiNO system. The bandgap of the TiNO thin film samples, measuredusing ultra violet (UV)–visible (400–800 nm) spectroscopy, was found tobe * 1.6 eV. As the number of photocatalysts/semiconductors that are activeunder the visible light irradiation is very limited, our approach to develop aunique visible-light-driven TiNO photoactive material system can open a newavenue for the realization of novel optical devices.
AB - A TiNxOy (TiNO) material system has been synthesized in thin film form for thefirst time using a pulsed laser deposition process. X-ray diffraction and X-rayphotoelectron spectroscopy measurements have been carried out to show partialoxidation of TiN to TiNO. The current (I)-voltage (V) characteristics recordedfrom TiNO films sandwiched between indium tin oxide (ITO) and gold (Au)layers and/or copper (Cu) electrodes have shown that the I–V curves lie in thefirst and third quadrants (i.e., both I and V are either positive or negative) in thedark conditions, while the I–V curves lie in the second and fourth quadrants(i.e., I and V with opposite sign) in the illuminated conditions. The positive signof power (I 9 V = Positive) under dark conditions indicates dissipation ofpower in the TiNO system, while the negative sign of the power(I 9 V = Negative) under optical illumination indicates the power generationcapability of TiNO system. The bandgap of the TiNO thin film samples, measuredusing ultra violet (UV)–visible (400–800 nm) spectroscopy, was found tobe * 1.6 eV. As the number of photocatalysts/semiconductors that are activeunder the visible light irradiation is very limited, our approach to develop aunique visible-light-driven TiNO photoactive material system can open a newavenue for the realization of novel optical devices.
M3 - Article
VL - 55
SP - 5123
EP - 5134
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 12
ER -