Epitaxial High-Yield Intrinsic and Te-doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application

Band gap engineering of GaAsSbN nanowires (NWs) grown by Ga-assisted molecularbeam epitaxy and demonstration of a Te-doped axial GaAsSbN NW-based Schottky barrierphotodetector on p-Si (111) in the near-infrared region are reported. Stringent control on NWnucleation conditions, stem growth duration, and NW exposure to the N-plasma were found to becritical for the successful growth of high-quality dilute nitride quaternary GaAsSbN NWs in the axialconfiguration. Planar defect-free structures were realized with room temperature photoluminescence(PL) characteristics, revealing reduced N-induced point defects and nonradiative recombinationcenters. N incorporation in the dilute nitride NWs was ascertained from PL and Raman spectral modeshifts and shapes and weak temperature-dependent PL peak energy. The advantage of Te-doping indilute nitride NWs using a GaTe captive source is the compensation of point defects, as evidenced by asignificant improvement in PL characteristics, Raman mode shifts, and spectral shape, with improvedphotodetector device performance relative to intrinsic dilute nitride NWs. Te-doped GaAsSbN NWSchottky-based photodetectors have been demonstrated on both single and ensemble configurationswith a resultant responsivity of 5 A/W at 860 nm and 3800 A/W at 1100, respectively. Detectivity of 3.2× 1010 Jones was achieved on the Te-doped ensemble NW device. The findings presented in this work showcase prospects for richband gap engineering using doped GaAsSbN NWs for near-infrared region device applications.