Gate-assisted high-Q-factor junction varactor

J. H. Gau; R. T. Wu; Steven Sang; C. H. Kuo; T. L. Chang; H. H. Chen; Anchor Chen; Joe Ko

doi:10.1109/LED.2005.853642

Gate-assisted high-Q-factor junction varactor

J. H. Gau
, R. T. Wu
, Steven Sang
, C. H. Kuo
, T. L. Chang
, H. H. Chen
, Anchor Chen
, Joe Ko

Family and Consumer Sciences

United Microelectronics Corporation Taiwan

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor with 723 fF capacitance at 2.4 GHz is as high as 108. Its tuning ratio is 30.1% when it is operated in the range of 0.5 to 2.5 V. © 2005 IEEE.

Original language	English
Pages (from-to)	682-683
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853642
State	Published - Sep 1 2005

Keywords

Q-factor
Tuning ratio
Varactor

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10.1109/LED.2005.853642

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title = "Gate-assisted high-Q-factor junction varactor",

abstract = "In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor with 723 fF capacitance at 2.4 GHz is as high as 108. Its tuning ratio is 30.1\% when it is operated in the range of 0.5 to 2.5 V. {\textcopyright} 2005 IEEE.",

keywords = "Q-factor, Tuning ratio, Varactor",

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AU - Gau, J. H.

AU - Wu, R. T.

AU - Sang, Steven

AU - Kuo, C. H.

AU - Chang, T. L.

AU - Chen, H. H.

AU - Chen, Anchor

AU - Ko, Joe

PY - 2005/9/1

Y1 - 2005/9/1

N2 - In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor with 723 fF capacitance at 2.4 GHz is as high as 108. Its tuning ratio is 30.1% when it is operated in the range of 0.5 to 2.5 V. © 2005 IEEE.

AB - In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor with 723 fF capacitance at 2.4 GHz is as high as 108. Its tuning ratio is 30.1% when it is operated in the range of 0.5 to 2.5 V. © 2005 IEEE.

KW - Q-factor

KW - Tuning ratio

KW - Varactor

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VL - 26

SP - 682

EP - 683

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Gate-assisted high-Q-factor junction varactor

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Keywords

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