High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

S. Xu; F. Baiocchi; H. Safar; J. Lott; A. Shibib; Zhijian Xie; T. Nigam; B. Jones; B. Thompson; J. Desko; P. Gammel

High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

S. Xu, F. Baiocchi, H. Safar, J. Lott, A. Shibib, Zhijian Xie, T. Nigam, B. Jones, B. Thompson, J. Desko, P. Gammel

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Unknown book
Pages	215-218
Volume	151
Edition	3
State	Published - 2003

Cite this

@inproceedings{9be021e37aeb49919388479b74ba6b38,

title = "High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications",

author = "S. Xu and F. Baiocchi and H. Safar and J. Lott and A. Shibib and Zhijian Xie and T. Nigam and B. Jones and B. Thompson and J. Desko and P. Gammel",

year = "2003",

language = "English",

volume = "151",

pages = "215--218",

booktitle = "Unknown book",

edition = "3",

}