@inproceedings{c74a2ad830d04c019309d5a5830f8aff,
title = "Impact of processing and growth conditions on the site-catalyzed patterned growth of GaAs nanowires by molecular beam epitaxy",
abstract = "We report on the site-selective growth of >90\% vertical GaAs nanowires (NWs) on Si (111) using self-assisted molecular beam epitaxy. The influences of growth parameters (pre-growth Ga opening time, V/III flux ratio) and processing conditions (reactive ion etching (RIE) and HF etching time) are investigated for different pitch lengths (200-1000 nm) to achieve vertical NWs. The processing variables determine the removal of the native oxide layer and the contact angle of Ga-droplet inside the patterned hole that are critical to the vertical orientation of the NWs. Pre-growth Ga-opening time is found to be a crucial factor determining the size of the droplet in the patterned hole, while the V/III beam equivalent pressure (BEP) ratio influenced the occupancy of the holes due to the axial growth of NWs being group-V limited.",
author = "Manish Sharma and Pavan Kasanaboina and Shanthi Iyer",
note = "Publisher Copyright: {\textcopyright} 2017 SPIE.; Nanoengineering: Fabrication, Properties, Optics, and Devices XIV 2017 ; Conference date: 09-08-2017 Through 10-08-2017",
year = "2017",
doi = "10.1117/12.2274669",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Spie",
editor = "Campo, \{Eva M.\} and Eldada, \{Louay A.\} and Dobisz, \{Elizabeth A.\}",
booktitle = "Nanoengineering",
}