TY - JOUR
T1 - Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si
AU - Liu, X.
AU - Kim, I. K.
AU - Aspnes, D. E.
PY - 2007/8/7
Y1 - 2007/8/7
N2 - The authors report real-time spectroscopic-polarimetric determinations of the initial phase of GaP heteroepitaxy by organometallic chemical vapor deposition on nanoscopically roughened (NR) (001)Si substrates, where polarimetry measurements are also used to quantify roughness. The authors compare the results with analogous data for GaP homoepitaxy and the initial phase of GaP heteroepitaxy on (001)GaAs. The large density of nucleation sites on NRSi significantly improves film continuity relative to nonroughened vicinal (001)Si substrates, but conditions that are typically used to grow GaP on (001)III-V surfaces generate metallic Ga, indicating that NRSi is more efficient at decomposing trimethylgallium than either GaP or GaAs. © 2007 American Vacuum Society.
AB - The authors report real-time spectroscopic-polarimetric determinations of the initial phase of GaP heteroepitaxy by organometallic chemical vapor deposition on nanoscopically roughened (NR) (001)Si substrates, where polarimetry measurements are also used to quantify roughness. The authors compare the results with analogous data for GaP homoepitaxy and the initial phase of GaP heteroepitaxy on (001)GaAs. The large density of nucleation sites on NRSi significantly improves film continuity relative to nonroughened vicinal (001)Si substrates, but conditions that are typically used to grow GaP on (001)III-V surfaces generate metallic Ga, indicating that NRSi is more efficient at decomposing trimethylgallium than either GaP or GaAs. © 2007 American Vacuum Society.
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U2 - 10.1116/1.2750345
DO - 10.1116/1.2750345
M3 - Article
SN - 1071-1023
VL - 25
SP - 1448
EP - 1452
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 4
ER -