Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

X. Liu; I. K. Kim; D. E. Aspnes

doi:10.1002/pssc.200777896

Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

X. Liu
, I. K. Kim
, D. E. Aspnes

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We use a real-time spectroscopic polarimeter integrated with an organometallic chemical vapor deposition system to investigate growth of GaP on Si, and particularly nanoscopically roughened (nr-)Si. We find nanoroughening is necessary to increase the density of nucleation sites and decrease reactant mobility and thereby grow continuous films instead of widely spaced islands. The nrSi surfaces are more highly reactive to the trimethylgallium precursor than III-V growth surfaces, leading to the appearance of metallic Ga if standard growth conditions are used in the initial phase of heteroepitaxy. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English
Title of host publication	Unknown book
Volume	5
Edition	Issue 5
DOIs	https://doi.org/10.1002/pssc.200777896
State	Published - 2008

Access to Document

10.1002/pssc.200777896

Cite this

@inproceedings{24df3f4d4fd3404d873f2983b3c21ef5,

title = "Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry",

abstract = "We use a real-time spectroscopic polarimeter integrated with an organometallic chemical vapor deposition system to investigate growth of GaP on Si, and particularly nanoscopically roughened (nr-)Si. We find nanoroughening is necessary to increase the density of nucleation sites and decrease reactant mobility and thereby grow continuous films instead of widely spaced islands. The nrSi surfaces are more highly reactive to the trimethylgallium precursor than III-V growth surfaces, leading to the appearance of metallic Ga if standard growth conditions are used in the initial phase of heteroepitaxy. {\textcopyright} 2008 Wiley-VCH Verlag GmbH \& Co. KGaA.",

author = "X. Liu and Kim, \{I. K.\} and Aspnes, \{D. E.\}",

year = "2008",

doi = "10.1002/pssc.200777896",

language = "English",

volume = "5",

booktitle = "Unknown book",

edition = "Issue 5",

}

TY - GEN

T1 - Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

AU - Liu, X.

AU - Kim, I. K.

AU - Aspnes, D. E.

PY - 2008

Y1 - 2008

N2 - We use a real-time spectroscopic polarimeter integrated with an organometallic chemical vapor deposition system to investigate growth of GaP on Si, and particularly nanoscopically roughened (nr-)Si. We find nanoroughening is necessary to increase the density of nucleation sites and decrease reactant mobility and thereby grow continuous films instead of widely spaced islands. The nrSi surfaces are more highly reactive to the trimethylgallium precursor than III-V growth surfaces, leading to the appearance of metallic Ga if standard growth conditions are used in the initial phase of heteroepitaxy. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - We use a real-time spectroscopic polarimeter integrated with an organometallic chemical vapor deposition system to investigate growth of GaP on Si, and particularly nanoscopically roughened (nr-)Si. We find nanoroughening is necessary to increase the density of nucleation sites and decrease reactant mobility and thereby grow continuous films instead of widely spaced islands. The nrSi surfaces are more highly reactive to the trimethylgallium precursor than III-V growth surfaces, leading to the appearance of metallic Ga if standard growth conditions are used in the initial phase of heteroepitaxy. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://dx.doi.org/10.1002/pssc.200777896

U2 - 10.1002/pssc.200777896

DO - 10.1002/pssc.200777896

M3 - Conference contribution

VL - 5

BT - Unknown book

ER -

Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

Abstract

Access to Document

Other files and links

Fingerprint

Cite this