@inproceedings{e42d2246bc524885922e6d0b985b95c2,
title = "Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications",
abstract = "Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID= 3×10-7 A, ION/OFF =2×106, V ON ∼ -2 V, SS ∼ 1 V/dec and μFE = 0.14 cm 2/V· s with a ΔVON of 3.3 V under 3 hours electrical stress were produced.",
keywords = "Flexible Electronics, GSZO, TAOS, TFT, XRR",
author = "Robert Alston and Shanthi Iyer and Tanina Bradley and Jay Lewis and Garry Cunningham and Eric Forsythe",
year = "2014",
doi = "10.1117/12.2041028",
language = "English",
isbn = "9780819499189",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Spie",
booktitle = "Advances in Display Technologies IV",
note = "Advances in Display Technologies IV ; Conference date: 05-02-2014 Through 06-02-2014",
}