Abstract
A design theory, fabrication procedure, and experimental results for heterojunction millimeter-wave transit time devices operating in the IMPATT, MITATT, or TUNNETT mode, are presented. The results show that significant improvements in the efficiency can be achieved by heterojunction structures. The diodes were operated as oscillators between 65 and 93 GHz. A pulled power output of 50 mW and RF conversion efficiency of 2. 4% was achieved at 72 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 973-976 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 35 |
| Issue number | 12 |
| DOIs | |
| State | Published - Jan 1 1987 |
| Event | 1987 IEEE MTT-S International Microwave Symposium Digest. - Duration: Jan 1 1987 → … |
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