Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission

Zhen Zhang; Joanna Atkin; Marinus Hopstaken; Michael Hatzistergos; Paul Ronsheim; Eric Liniger; Robert Laibowitz; Paul Michael Solomon

doi:10.1109/TED.2012.2197399

Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission

Zhen Zhang
, Joanna Atkin
, Marinus Hopstaken
, Michael Hatzistergos
, Paul Ronsheim
, Eric Liniger
, Robert Laibowitz
, Paul Michael Solomon

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide. © 2012 IEEE.

Original language	English
Article number	6204081
Pages (from-to)	2027-2032
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	8
DOIs	https://doi.org/10.1109/TED.2012.2197399
State	Published - May 29 2012

Keywords

Dopant segregation (DS)
interface dipole
internal photoemission (IPE)
Schottky barrier engineering
Schottky diodes
silicide

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10.1109/TED.2012.2197399

Cite this

@article{f647fe277a1b49528b81854addff06ee,

title = "Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission",

abstract = "An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide. {\textcopyright} 2012 IEEE.",

keywords = "Dopant segregation (DS), interface dipole, internal photoemission (IPE), Schottky barrier engineering, Schottky diodes, silicide",

author = "Zhen Zhang and Joanna Atkin and Marinus Hopstaken and Michael Hatzistergos and Paul Ronsheim and Eric Liniger and Robert Laibowitz and Solomon, \{Paul Michael\}",

year = "2012",

month = may,

day = "29",

doi = "10.1109/TED.2012.2197399",

language = "English",

volume = "59",

pages = "2027--2032",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission

AU - Zhang, Zhen

AU - Atkin, Joanna

AU - Hopstaken, Marinus

AU - Hatzistergos, Michael

AU - Ronsheim, Paul

AU - Liniger, Eric

AU - Laibowitz, Robert

AU - Solomon, Paul Michael

PY - 2012/5/29

Y1 - 2012/5/29

N2 - An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide. © 2012 IEEE.

AB - An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide. © 2012 IEEE.

KW - Dopant segregation (DS)

KW - interface dipole

KW - internal photoemission (IPE)

KW - Schottky barrier engineering

KW - Schottky diodes

KW - silicide

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84864743539&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84864743539&origin=inward

U2 - 10.1109/TED.2012.2197399

DO - 10.1109/TED.2012.2197399

M3 - Article

SN - 0018-9383

VL - 59

SP - 2027

EP - 2032

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 6204081

ER -

Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission

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