TY - JOUR
T1 - Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
AU - Zhang, Zhen
AU - Atkin, Joanna
AU - Hopstaken, Marinus
AU - Hatzistergos, Michael
AU - Ronsheim, Paul
AU - Liniger, Eric
AU - Laibowitz, Robert
AU - Solomon, Paul Michael
PY - 2012
Y1 - 2012
N2 - An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide.
AB - An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barrier height (SBH) modification, is extracted from the field dependence of the barrier heights. A clear difference between the dopant segregation (DS) junctions and a pure Schottky junction is found: Boron DS modifies the effective SBH by forming a p +-n junction while arsenic DS forms a Shannon junction with a fully depleted 1.5-nm doping depth in front of the silicide.
KW - Dopant segregation (DS)
KW - Schottky barrier engineering
KW - Schottky diodes
KW - interface dipole
KW - internal photoemission (IPE)
KW - silicide
UR - https://www.scopus.com/pages/publications/84864743539
U2 - 10.1109/TED.2012.2197399
DO - 10.1109/TED.2012.2197399
M3 - Article
SN - 0018-9383
VL - 59
SP - 2027
EP - 2032
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 6204081
ER -