Quantum interference effects in titanium nitride films at low temperatures

Dhananjay Kumar; Manosi Roy; Muchha R Reddy; Rahul Ponnam; Panupong Jaipan; Onome Scott-Emuakpr; Sergey Yarmolenko; Unknown First Name Unknown Last Name; Alak K Majumdar; Elizabeth Lane

Quantum interference effects in titanium nitride films at low temperatures

Dhananjay Kumar, Manosi Roy, Muchha R Reddy, Rahul Ponnam, Panupong Jaipan, Onome Scott-Emuakpr, Sergey Yarmolenko, Unknown First Name Unknown Last Name, Alak K Majumdar, Elizabeth Lane

Mechanical Engineering

Research output: Contribution to journal › Article

Abstract

Detailed electrical resistivity () measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 tesla. The (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100-300 K), the (T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the (T) is unequivocally described by the quantum interference effect (∝ - √T). The value of the coefficient of the √T term matches well with the near-universal value.

Original language	English
Pages (from-to)	5-Jan
Journal	Thin Solid Films
Volume	681
State	Published - 2019

Cite this

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title = "Quantum interference effects in titanium nitride films at low temperatures",

abstract = "Detailed electrical resistivity () measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 tesla. The (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100-300 K), the (T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the (T) is unequivocally described by the quantum interference effect (∝ - √T). The value of the coefficient of the √T term matches well with the near-universal value.",

author = "Dhananjay Kumar and Manosi Roy and Reddy, \{Muchha R\} and Rahul Ponnam and Panupong Jaipan and Onome Scott-Emuakpr and Sergey Yarmolenko and \{Unknown Last Name\}, \{Unknown First Name\} and Majumdar, \{Alak K\} and Elizabeth Lane",

year = "2019",

language = "English",

volume = "681",

pages = "5--Jan",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Quantum interference effects in titanium nitride films at low temperatures

AU - Kumar, Dhananjay

AU - Roy, Manosi

AU - Reddy, Muchha R

AU - Ponnam, Rahul

AU - Jaipan, Panupong

AU - Scott-Emuakpr, Onome

AU - Yarmolenko, Sergey

AU - Unknown Last Name, Unknown First Name

AU - Majumdar, Alak K

AU - Lane, Elizabeth

PY - 2019

Y1 - 2019

N2 - Detailed electrical resistivity () measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 tesla. The (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100-300 K), the (T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the (T) is unequivocally described by the quantum interference effect (∝ - √T). The value of the coefficient of the √T term matches well with the near-universal value.

AB - Detailed electrical resistivity () measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 tesla. The (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100-300 K), the (T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the (T) is unequivocally described by the quantum interference effect (∝ - √T). The value of the coefficient of the √T term matches well with the near-universal value.

M3 - Article

VL - 681

SP - 5-Jan

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Quantum interference effects in titanium nitride films at low temperatures

Abstract

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