Quantum interference effects in titanium nitride films at low temperatures

Manosi Roy; Nikhil R. Mucha; Rahul G. Ponnam; Panupong Jaipan; Onome Scott-Emuakpor; Sergey Yarmolenko; Alak K. Majumdar; Dhananjay Kumar

doi:10.1016/j.tsf.2019.05.005

Quantum interference effects in titanium nitride films at low temperatures

Manosi Roy
, Nikhil R. Mucha
, Rahul G. Ponnam
, Panupong Jaipan
, Onome Scott-Emuakpor
, Sergey Yarmolenko
, Alak K. Majumdar
, Dhananjay Kumar

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100−300K), the ρ(T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the ρ(T) is unequivocally described by the quantum interference effect (∝ − T). The value of the coefficient of the T term matches well with the near-universal value.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Thin Solid Films
Volume	681
DOIs	https://doi.org/10.1016/j.tsf.2019.05.005
State	Published - Jul 1 2019

Keywords

Quantum interference effect
Resistivity minima
Titanium nitride

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10.1016/j.tsf.2019.05.005

Cite this

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title = "Quantum interference effects in titanium nitride films at low temperatures",

abstract = "Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100−300K), the ρ(T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the ρ(T) is unequivocally described by the quantum interference effect (∝ − T). The value of the coefficient of the T term matches well with the near-universal value.",

keywords = "Quantum interference effect, Resistivity minima, Titanium nitride",

author = "Manosi Roy and Mucha, \{Nikhil R.\} and Ponnam, \{Rahul G.\} and Panupong Jaipan and Onome Scott-Emuakpor and Sergey Yarmolenko and Majumdar, \{Alak K.\} and Dhananjay Kumar",

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doi = "10.1016/j.tsf.2019.05.005",

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TY - JOUR

T1 - Quantum interference effects in titanium nitride films at low temperatures

AU - Roy, Manosi

AU - Mucha, Nikhil R.

AU - Ponnam, Rahul G.

AU - Jaipan, Panupong

AU - Scott-Emuakpor, Onome

AU - Yarmolenko, Sergey

AU - Majumdar, Alak K.

AU - Kumar, Dhananjay

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100−300K), the ρ(T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the ρ(T) is unequivocally described by the quantum interference effect (∝ − T). The value of the coefficient of the T term matches well with the near-universal value.

AB - Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100−300K), the ρ(T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the ρ(T) is unequivocally described by the quantum interference effect (∝ − T). The value of the coefficient of the T term matches well with the near-universal value.

KW - Quantum interference effect

KW - Resistivity minima

KW - Titanium nitride

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VL - 681

SP - 1

EP - 5

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Quantum interference effects in titanium nitride films at low temperatures

Abstract

Keywords

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