Real-time characterization of GaSb homo- and heteroepitaxy

S. Kim; K. L. Flock; M. Asar; I. K. Kim; D. E. Aspnes

doi:10.1116/1.1771669

Real-time characterization of GaSb homo- and heteroepitaxy

S. Kim
, K. L. Flock
, M. Asar
, I. K. Kim
, D. E. Aspnes

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The real-time investigations of the homoepitaxial and heteroepitaxial growth of Gallium Antimonide (GaSb) were discussed. The Real-time spectroscopic ellipsometry (RTSE) analysis shows that the (001) GaSb surface degrades immediately in excess trimethylgallium (TMG) but stablizes in Trimethylantimony (TMSb). The surface-dimer contribution to the optical-anisotropy (OA) signal of (001) GaSb is small and masked by structural (roughness) effects. The results show that the initial phase of heteroepitaxy on (001) GaAs occurs as a coexistence of seperate regions of GaAs and GaSb.

Original language	English
Title of host publication	Unknown book
Volume	22
Edition	Issue 4
DOIs	https://doi.org/10.1116/1.1771669
State	Published - 2004

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10.1116/1.1771669

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title = "Real-time characterization of GaSb homo- and heteroepitaxy",

abstract = "The real-time investigations of the homoepitaxial and heteroepitaxial growth of Gallium Antimonide (GaSb) were discussed. The Real-time spectroscopic ellipsometry (RTSE) analysis shows that the (001) GaSb surface degrades immediately in excess trimethylgallium (TMG) but stablizes in Trimethylantimony (TMSb). The surface-dimer contribution to the optical-anisotropy (OA) signal of (001) GaSb is small and masked by structural (roughness) effects. The results show that the initial phase of heteroepitaxy on (001) GaAs occurs as a coexistence of seperate regions of GaAs and GaSb.",

author = "S. Kim and Flock, \{K. L.\} and M. Asar and Kim, \{I. K.\} and Aspnes, \{D. E.\}",

year = "2004",

doi = "10.1116/1.1771669",

language = "English",

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booktitle = "Unknown book",

edition = "Issue 4",

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TY - GEN

T1 - Real-time characterization of GaSb homo- and heteroepitaxy

AU - Kim, S.

AU - Flock, K. L.

AU - Asar, M.

AU - Kim, I. K.

AU - Aspnes, D. E.

PY - 2004

Y1 - 2004

N2 - The real-time investigations of the homoepitaxial and heteroepitaxial growth of Gallium Antimonide (GaSb) were discussed. The Real-time spectroscopic ellipsometry (RTSE) analysis shows that the (001) GaSb surface degrades immediately in excess trimethylgallium (TMG) but stablizes in Trimethylantimony (TMSb). The surface-dimer contribution to the optical-anisotropy (OA) signal of (001) GaSb is small and masked by structural (roughness) effects. The results show that the initial phase of heteroepitaxy on (001) GaAs occurs as a coexistence of seperate regions of GaAs and GaSb.

AB - The real-time investigations of the homoepitaxial and heteroepitaxial growth of Gallium Antimonide (GaSb) were discussed. The Real-time spectroscopic ellipsometry (RTSE) analysis shows that the (001) GaSb surface degrades immediately in excess trimethylgallium (TMG) but stablizes in Trimethylantimony (TMSb). The surface-dimer contribution to the optical-anisotropy (OA) signal of (001) GaSb is small and masked by structural (roughness) effects. The results show that the initial phase of heteroepitaxy on (001) GaAs occurs as a coexistence of seperate regions of GaAs and GaSb.

UR - https://dx.doi.org/10.1116/1.1771669

U2 - 10.1116/1.1771669

DO - 10.1116/1.1771669

M3 - Conference contribution

VL - 22

BT - Unknown book

ER -

Real-time characterization of GaSb homo- and heteroepitaxy

Abstract

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