Robust design and manufacturing of ceramic laminates with controlled thermal residual stresses for enhanced toughness

  • Nina Orlovskaya
  • , Mykola Lugovy
  • , Vladimir Subbotin
  • , Oleksandr Radchenko
  • , Jane Adams
  • , Munjal Chheda
  • , James Shih
  • , Jagannathan Sankar
  • , Sergey Yarmolenko

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Boron carbide-silicon carbide ceramic composites are very promising armor materials because they are intrinsically very hard. However, their fracture toughness is not very high. Their ballistic performance could be significantly increased if the brittleness of these materials could be decreased. Here we report development of boron carbide-silicon carbide layered ceramics with controlled compressive and tensile stresses in separate layers. Such B 4C-SiC laminates with strong interfaces can provide high apparent fracture toughness and damage tolerance along with high protection capabilities. The theory of heterogeneous layered systems was used to develop optimal design parameters allowing the evaluation and maximization of apparent fracture toughness. The layered composites were designed in a way to achieve high compressive residual stresses in thin B4C-SiC based layers and low tensile residuals stresses in thick B4C layers. The residual stresses were controlled by the phase composition of layers and the layers thickness. The estimated apparent fracture toughness was calculated for both three layered and nine layered composites. B4C-30 wt%SiC/B4C laminates were made based on the optimized design for high apparent fracture toughness. Processing of laminates involved preprocessing of powders, forming green tapes and hot pressing. Work is in progress to measure fracture toughness of laminates, as well as their strength, hardness and the ballistic performance. © 2005 Springer Science + Business Media, Inc.
Original languageEnglish
Pages (from-to)5483-5490
Number of pages8
JournalJournal of Materials Science
Volume40
Issue number20
DOIs
StatePublished - Oct 1 2005

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