Study of Barrier height inhomogeneity’s and Trap density using Temperature Dependent electrical characteristics of Ti/GaAsSb Nanowire Schottky Diode

Mehul Parakh; Rabin Pokarel; Sean Johnson; Manish Sharma; Jia Li; Shanthi Iyer

Study of Barrier height inhomogeneity’s and Trap density using Temperature Dependent electrical characteristics of Ti/GaAsSb Nanowire Schottky Diode

Mehul Parakh, Rabin Pokarel, Sean Johnson, Manish Sharma, Jia Li, Shanthi Iyer

Research output: Contribution to conference › Paper

Original language	English
State	Published - 2018
Event	Nanomanufacturing conference 2018 - Duration: Jan 1 2018 → …

Conference

Conference	Nanomanufacturing conference 2018
Period	01/1/18 → …

Cite this

@conference{85e6b145974e4170ab974db56aeb3fc2,

title = "Study of Barrier height inhomogeneity{\textquoteright}s and Trap density using Temperature Dependent electrical characteristics of Ti/GaAsSb Nanowire Schottky Diode",

author = "Mehul Parakh and Rabin Pokarel and Sean Johnson and Manish Sharma and Jia Li and Shanthi Iyer",

year = "2018",

language = "English",

note = "Nanomanufacturing conference 2018 ; Conference date: 01-01-2018",

}

TY - CONF

T1 - Study of Barrier height inhomogeneity’s and Trap density using Temperature Dependent electrical characteristics of Ti/GaAsSb Nanowire Schottky Diode

AU - Parakh, Mehul

AU - Pokarel, Rabin

AU - Johnson, Sean

AU - Sharma, Manish

AU - Li, Jia

AU - Iyer, Shanthi

PY - 2018

Y1 - 2018

M3 - Paper

T2 - Nanomanufacturing conference 2018

Y2 - 1 January 2018

ER -