Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications

Pavan Kumar Kasanaboina; Sai Krishna Ojha; Shifat Us Sami; Lewis Reynolds; Yang Liu; Shanthi Iyer

doi:10.1117/12.2080572

Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications

Pavan Kumar Kasanaboina, Sai Krishna Ojha, Shifat Us Sami, Lewis Reynolds, Yang Liu, Shanthi Iyer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ga assisted GaAs/GaAsSb core-shell structured nanowires were successfully grown on chemically etched p-type Si(111) substrate by molecular beam epitaxy (MBE). The morphology, structural and optical properties of the nanowires are found to be strongly influenced by the shell growth temperature and Sb% in the nanowires. The nanowires exhibit planar defects like twins and stacking faults, with more stacking faults and micro-twins found at the top section. Optical characteristics of the nanowires as measured by 4K photoluminescence (PL) exhibit a red shift to 1.2 eV with increasing Sb incorporation up to 12%. The Raman spectra of reference GaAs nanowires show TO and LO modes representative of the zinc blende structure at 291 cm_-1 and 267.8 cm_-1, respectively. Red shifts of both modes in conjunction with corresponding asymmetrical peak broadening observed in X-ray diffraction with increasing Sb incorporation are attributed to enhanced strain and disorder within the nanostructures. Nanowires of similar Sb composition but grown at different shell temperatures reveal straight nanowires with better microstructural and optical quality when grown at higher growth temperatures. The presence of GaAs passivation layer significantly enhanced the PL intensity such that PL was observed even at room temperature.

Original language	English
Title of host publication	Quantum Dots and Nanostructures
Subtitle of host publication	Synthesis, Characterization, and Modeling XII
Editors	Diana L. Huffaker, Holger Eisele
Publisher	Spie
ISBN (Electronic)	9781628414639
DOIs	https://doi.org/10.1117/12.2080572
State	Published - 2015
Externally published	Yes
Event	Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII - San Francisco, United States Duration: Feb 9 2015 → Feb 11 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9373
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Country/Territory	United States
City	San Francisco
Period	02/9/15 → 02/11/15

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10.1117/12.2080572

Cite this

Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, L., Liu, Y., & Iyer, S. (2015). Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications. In D. L. Huffaker, & H. Eisele (Eds.), Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII Article 937307 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9373). Spie. https://doi.org/10.1117/12.2080572

Kasanaboina, Pavan Kumar ; Ojha, Sai Krishna ; Sami, Shifat Us et al. / Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications. Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII. editor / Diana L. Huffaker ; Holger Eisele. Spie, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{dc4dcb7570f94768a2584187b9eebdb3,

title = "Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications",

abstract = "Ga assisted GaAs/GaAsSb core-shell structured nanowires were successfully grown on chemically etched p-type Si(111) substrate by molecular beam epitaxy (MBE). The morphology, structural and optical properties of the nanowires are found to be strongly influenced by the shell growth temperature and Sb\% in the nanowires. The nanowires exhibit planar defects like twins and stacking faults, with more stacking faults and micro-twins found at the top section. Optical characteristics of the nanowires as measured by 4K photoluminescence (PL) exhibit a red shift to 1.2 eV with increasing Sb incorporation up to 12\%. The Raman spectra of reference GaAs nanowires show TO and LO modes representative of the zinc blende structure at 291 cm-1 and 267.8 cm-1, respectively. Red shifts of both modes in conjunction with corresponding asymmetrical peak broadening observed in X-ray diffraction with increasing Sb incorporation are attributed to enhanced strain and disorder within the nanostructures. Nanowires of similar Sb composition but grown at different shell temperatures reveal straight nanowires with better microstructural and optical quality when grown at higher growth temperatures. The presence of GaAs passivation layer significantly enhanced the PL intensity such that PL was observed even at room temperature.",

author = "Kasanaboina, \{Pavan Kumar\} and Ojha, \{Sai Krishna\} and Sami, \{Shifat Us\} and Lewis Reynolds and Yang Liu and Shanthi Iyer",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII ; Conference date: 09-02-2015 Through 11-02-2015",

year = "2015",

doi = "10.1117/12.2080572",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Spie",

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Kasanaboina, PK, Ojha, SK, Sami, SU, Reynolds, L, Liu, Y & Iyer, S 2015, Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications. in DL Huffaker & H Eisele (eds), Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII., 937307, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9373, Spie, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, San Francisco, United States, 02/9/15. https://doi.org/10.1117/12.2080572

Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications. / Kasanaboina, Pavan Kumar; Ojha, Sai Krishna; Sami, Shifat Us et al.
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII. ed. / Diana L. Huffaker; Holger Eisele. Spie, 2015. 937307 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9373).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications

AU - Kasanaboina, Pavan Kumar

AU - Ojha, Sai Krishna

AU - Sami, Shifat Us

AU - Reynolds, Lewis

AU - Liu, Yang

AU - Iyer, Shanthi

PY - 2015

Y1 - 2015

N2 - Ga assisted GaAs/GaAsSb core-shell structured nanowires were successfully grown on chemically etched p-type Si(111) substrate by molecular beam epitaxy (MBE). The morphology, structural and optical properties of the nanowires are found to be strongly influenced by the shell growth temperature and Sb% in the nanowires. The nanowires exhibit planar defects like twins and stacking faults, with more stacking faults and micro-twins found at the top section. Optical characteristics of the nanowires as measured by 4K photoluminescence (PL) exhibit a red shift to 1.2 eV with increasing Sb incorporation up to 12%. The Raman spectra of reference GaAs nanowires show TO and LO modes representative of the zinc blende structure at 291 cm-1 and 267.8 cm-1, respectively. Red shifts of both modes in conjunction with corresponding asymmetrical peak broadening observed in X-ray diffraction with increasing Sb incorporation are attributed to enhanced strain and disorder within the nanostructures. Nanowires of similar Sb composition but grown at different shell temperatures reveal straight nanowires with better microstructural and optical quality when grown at higher growth temperatures. The presence of GaAs passivation layer significantly enhanced the PL intensity such that PL was observed even at room temperature.

AB - Ga assisted GaAs/GaAsSb core-shell structured nanowires were successfully grown on chemically etched p-type Si(111) substrate by molecular beam epitaxy (MBE). The morphology, structural and optical properties of the nanowires are found to be strongly influenced by the shell growth temperature and Sb% in the nanowires. The nanowires exhibit planar defects like twins and stacking faults, with more stacking faults and micro-twins found at the top section. Optical characteristics of the nanowires as measured by 4K photoluminescence (PL) exhibit a red shift to 1.2 eV with increasing Sb incorporation up to 12%. The Raman spectra of reference GaAs nanowires show TO and LO modes representative of the zinc blende structure at 291 cm-1 and 267.8 cm-1, respectively. Red shifts of both modes in conjunction with corresponding asymmetrical peak broadening observed in X-ray diffraction with increasing Sb incorporation are attributed to enhanced strain and disorder within the nanostructures. Nanowires of similar Sb composition but grown at different shell temperatures reveal straight nanowires with better microstructural and optical quality when grown at higher growth temperatures. The presence of GaAs passivation layer significantly enhanced the PL intensity such that PL was observed even at room temperature.

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U2 - 10.1117/12.2080572

DO - 10.1117/12.2080572

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Quantum Dots and Nanostructures

A2 - Huffaker, Diana L.

A2 - Eisele, Holger

PB - Spie

T2 - Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII

Y2 - 9 February 2015 through 11 February 2015

ER -

Kasanaboina PK, Ojha SK, Sami SU, Reynolds L, Liu Y, Iyer S. Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications. In Huffaker DL, Eisele H, editors, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII. Spie. 2015. 937307. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2080572

Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications

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