The evolution of optical and electrical properties of low-k dielectrics under bias stress

J. M. Atkin; E. Cartier; T. M. Shaw; J. R. Lloyd; Robert Laibowitz; T. F. Heinz

doi:10.1016/j.mee.2009.03.060

The evolution of optical and electrical properties of low-k dielectrics under bias stress

J. M. Atkin
, E. Cartier
, T. M. Shaw
, J. R. Lloyd
, Robert Laibowitz
, T. F. Heinz

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low-k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding of the processes leading to time-dependent dielectric breakdown. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1891-1893
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.060
State	Published - Jul 1 2009

Keywords

Low-k dielectrics
Reliability
Time-dependent dielectric breakdown

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10.1016/j.mee.2009.03.060

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@article{bc6bf4b552614966aaa9e9b8be952bae,

title = "The evolution of optical and electrical properties of low-k dielectrics under bias stress",

abstract = "Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low-k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding of the processes leading to time-dependent dielectric breakdown. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "Low-k dielectrics, Reliability, Time-dependent dielectric breakdown",

author = "Atkin, \{J. M.\} and E. Cartier and Shaw, \{T. M.\} and Lloyd, \{J. R.\} and Robert Laibowitz and Heinz, \{T. F.\}",

year = "2009",

month = jul,

day = "1",

doi = "10.1016/j.mee.2009.03.060",

language = "English",

volume = "86",

pages = "1891--1893",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "7-9",

}

TY - JOUR

T1 - The evolution of optical and electrical properties of low-k dielectrics under bias stress

AU - Atkin, J. M.

AU - Cartier, E.

AU - Shaw, T. M.

AU - Lloyd, J. R.

AU - Laibowitz, Robert

AU - Heinz, T. F.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low-k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding of the processes leading to time-dependent dielectric breakdown. © 2009 Elsevier B.V. All rights reserved.

AB - Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low-k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding of the processes leading to time-dependent dielectric breakdown. © 2009 Elsevier B.V. All rights reserved.

KW - Low-k dielectrics

KW - Reliability

KW - Time-dependent dielectric breakdown

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67349102608&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=67349102608&origin=inward

U2 - 10.1016/j.mee.2009.03.060

DO - 10.1016/j.mee.2009.03.060

M3 - Article

SN - 0167-9317

VL - 86

SP - 1891

EP - 1893

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

The evolution of optical and electrical properties of low-k dielectrics under bias stress

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Keywords

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