| Original language | English |
|---|---|
| Pages (from-to) | 1709-1711 |
| Journal | Electron Devices, IEEE Transactions on |
| Volume | 42 |
| Issue number | 9 |
| State | Published - 1995 |
Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET’s
A. A Osman, M. A Osman, Numan Dogan, M. A Imam
Research output: Contribution to journal › Article